???`? qs043-401m0056 (2/4) ? ?? dimension:mm ????g?R ollector-mitter oltage ` ? g R ate-mitter oltage ollector urrent p ? ollector ower issipation unction emperature ange torage emperature ange ~ F R(erminal to ase ,inute) solation oltage , odule ase to eatsink . ? .. ounting orque usbar to ain erminal ? . ? (kgf?cm) . . . ollector-mitter ut-ff urrent = 1200v, = 0v ` ? ate-mitter eakage urrent = 20v, = 0v . ? ????g??R ollector-mitter aturation oltage = 800a, = 15v . . ` R ate-mitter hreshold oltage h = 5v, = 800ma nput apacitance = 10v, = 0v,= 1mh 66,000 N r g ise ime . . `??rg urn-on ime . . r g all ime . . ???rg witching ime `???rg urn-off ime = 600v l = 0.75 g = 0.5 = 15v . . ? ?`?`??`? orward urrent . . . R eak orward oltage = 800a, = 0v . . r g everse ecovery ime = 800a, = -10v i/t= 1600a/s . . ? . . . . hermal mpedance iode th(j-c) junction to case . (c) 1 2 (e) 4 (e) 3 (g) 2 -m4 4 - ?6.5 80 2 -m8 110 93 0.25 62 0.25 20 20 13 21 29 4 2 1 3 +1.0 - 0.5 36 25.5 +1.0 - 0.5 23 7 label
???`? ?? 048121620 0 2 4 6 8 10 12 14 16 gate to emitter voltage v ge (v) collector to emitter voltage v ce (v) fig.2- collector to emitter on voltage vs. gate to emitter voltage (typical) t c =25 800a i c =400a 1600a 048121620 0 2 4 6 8 10 12 14 16 gate to emitter voltage v ge (v) collector to emitter voltage v ce (v) fig.3- collector to emitter on voltage vs. gate to emitter voltage (typical) i c =400a 800a 1600a t c =125 0 2 4 6 8 10 12 14 16 0 1000 2000 3000 4000 5000 6000 0 100 200 300 400 500 600 700 800 total gate charge qg (nc) collector to emitter voltage v ce (v) gate to emitter voltage v ge (v) fig.4- gate charge vs. collector to emitter voltage (typical) v ce =600v 400v 200v r l =0.75 t c =25 0.1 0.2 0.5 1 2 5 10 20 50 100 200 100 200 500 1000 2000 5000 10000 20000 50000 100000 200000 500000 1000000 collector to emitter voltage v ce (v) capacitance c (pf) fig.5- capacitance vs. collector to emitter voltage (typical) cies coes cres v ge =0v f=1mh z t c =25 0 200 400 600 800 0 0.2 0.4 0.6 0.8 1 1.2 1.4 collector current i c (a) switching time t (s) fig.6- collector current vs. switching time (typical) t off t f t r t on v cc =600v r g =0.5 v ge =15v t c =25 0246810 0 200 400 600 800 1000 1200 1400 1600 collector to emitter voltage v ce (v) collector current i c (a) fig.1- output characteristics (typical) t c =25 10v 9v 12v 15v v ge =20v 8v 7v
???`? ?? 0.05 0.1 0.2 0.5 1 2 5 10 20 0.05 0.1 0.2 0.5 1 2 5 10 series gate impedance r g () switching time t (s) fig.7- series gate impedance vs. switching time (typical) v cc =600v i c =800a v ge =15v t c =25 tf tr ton toff 01234 0 200 400 600 800 1000 1200 1400 1600 forward voltage v f (v) forward current i f (a) fig.8- forward characteristics of free wheeling diode (typical) t c =25 t c =125 0 800 1600 2400 3200 4000 4800 50 100 200 500 1000 -di/dt (a/s) peak reverse recovery current i rrm (a) reverse recovery time trr (ns) fig.9- reverse recovery characteristics (typical) i f =800a t c =25 i rrm trr 10 -5 10 -4 10 -3 10 -2 10 - 1 110 -4 2x10 -4 5x10 -4 -3 2x10 -3 5x10 -3 -2 2x10 -2 5x10 -2 1x10 -1 2x10 -1 time t s tansient thermal impedance rth (j-c) (?c/w) fig11-tansient thermal impedance tc=25 1 shot igbt frd 1x10 1x10 1x10 1 0 400 800 1200 1600 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 2000 5000 collector to emitter voltage v ce (v) collector current i c (a) fig.10- reverse bias safe operating area r g =0.5 v ge =15v t c Q125
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